Band gaps in incommensurable graphene on hexagonal boron nitride

被引:71
作者
Bokdam, Menno [1 ]
Amlaki, Taher
Brocks, Geert
Kelly, Paul J.
机构
[1] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands
来源
PHYSICAL REVIEW B | 2014年 / 89卷 / 20期
关键词
SCANNING-TUNNELING-MICROSCOPY; AUGMENTED-WAVE METHOD; ELECTRONIC-PROPERTIES; CARBON NANOTUBES; BACK SCATTERING; DIRAC FERMIONS; HETEROSTRUCTURES; TRANSISTOR; SUBSTRATE; PROSPECTS;
D O I
10.1103/PhysRevB.89.201404
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction with the substrate is sufficient to open a gap, in contradiction of earlier findings. Using many-body perturbation theory, we find that the small observed gap is what remains after a much larger underlying quasiparticle gap is suppressed by incommensurability. The sensitivity of this suppression to a small modulation of the distance separating graphene from the substrate suggests ways of exposing the larger underlying gap.
引用
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页数:5
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