Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

被引：719

作者：

Britnell, Liam ^{[1
]}

Gorbachev, Roman V. ^{[2
]}

Jalil, Rashid ^{[2
]}

Belle, Branson D. ^{[2
]}

Schedin, Fred ^{[2
]}

Katsnelson, Mikhail I. ^{[3
]}

Eaves, Laurence ^{[4
]}

Morozov, Sergey V. ^{[5
]}

Mayorov, Alexander S. ^{[1
]}

Peres, Nuno M. R. ^{[6
,7
,8
]}

Castro Neto, Antonio H. ^{[7
,8
]}

Leist, Jon ^{[9
]}

Geim, Andre K. ^{[1
,2
]}

Ponomarenko, Leonid A. ^{[1
]}

Novoselov, Kostya S. ^{[1
]}

机构：

[1] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

[3] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands

[4] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[5] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

[6] Univ Minho, Dept Fis, P-4710057 Braga, Portugal

[7] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore

[8] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[9] Moment Performance Mat, Strongsville, OH USA

来源：

NANO LETTERS | 2012年 / 12卷 / 03期

基金：

欧洲研究理事会;

关键词：

Electron tunneling; boron nitride; graphene; ultrathin; conductive AFM; GRAPHENE;

D O I：

10.1021/nl3002205

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.

引用

页码：1707 / 1710

页数：4

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