Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

被引：1395

作者：

Mayorov, Alexander S. ^{[1
]}

Gorbachev, Roman V. ^{[1
]}

Morozov, Sergey V. ^{[1
,2
]}

Britnell, Liam ^{[1
]}

Jalil, Rashid ^{[3
]}

Ponomarenko, Leonid A. ^{[1
]}

Blake, Peter ^{[3
]}

Novoselov, Kostya S. ^{[1
]}

Watanabe, Kenji ^{[4
]}

Taniguchi, Takashi ^{[4
]}

Geim, A. K. ^{[1
,3
]}

机构：

[1] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[2] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

[3] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

NANO LETTERS | 2011年 / 11卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

Boron nitride; encapsulated graphene; ballistic transport; negative bend resistance; top gate;

D O I：

10.1021/nl200758b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

引用

页码：2396 / 2399

页数：4

共 15 条

[1] BILLIARD MODEL OF A BALLISTIC MULTIPROBE CONDUCTOR [J].

BEENAKKER, CWJ ;

VANHOUTEN, H .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1857-1860

[2] ENHANCEMENT OF RESISTANCE ANOMALIES BY DIFFUSE BOUNDARY SCATTERING IN MULTIPROBE BALLISTIC CONDUCTORS [J].

BLAIKIE, RJ ;

NAKAZATO, K ;

CLEAVER, JRA ;

AHMED, H .

PHYSICAL REVIEW B, 1992, 46 (15) :9796-9799

[3] Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point [J].

Blake, P. ;

Yang, R. ;

Morozov, S. V. ;

Schedin, F. ;

Ponomarenko, L. A. ;

Zhukov, A. A. ;

Nair, R. R. ;

Grigorieva, I. V. ;

Novoselov, K. S. ;

Geim, A. K. .

SOLID STATE COMMUNICATIONS, 2009, 149 (27-28) :1068-1071

[4] Temperature-dependent transport in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Hone, J. ;

Stormer, H. L. ;

Kim, P. .

PHYSICAL REVIEW LETTERS, 2008, 101 (09)

[5] Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons [J].

Castro, Eduardo V. ;

Ochoa, H. ;

Katsnelson, M. I. ;

Gorbachev, R. V. ;

Elias, D. C. ;

Novoselov, K. S. ;

Geim, A. K. ;

Guinea, F. .

PHYSICAL REVIEW LETTERS, 2010, 105 (26)

[6] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[7]

DEAN CR, 2010, ARXIV10101179

[8] Approaching ballistic transport in suspended graphene [J].

Du, Xu ;

Skachko, Ivan ;

Barker, Anthony ;

Andrei, Eva Y. .

NATURE NANOTECHNOLOGY, 2008, 3 (08) :491-495

[9] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[10] Ballistic transport and boundary scattering in InSb/In1-xAlxSb mesoscopic devices [J].

Gilbertson, A. M. ;

Fearn, M. ;

Kormanyos, A. ;

Read, D. E. ;

Lambert, C. J. ;

Emeny, M. T. ;

Ashley, T. ;

Solin, S. A. ;

Cohen, L. F. .

PHYSICAL REVIEW B, 2011, 83 (07)

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