Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons

被引：303

作者：

Castro, Eduardo V. ^{[1
]}

Ochoa, H. ^{[1
]}

Katsnelson, M. I. ^{[2
]}

Gorbachev, R. V. ^{[3
,4
]}

Elias, D. C. ^{[3
,4
]}

Novoselov, K. S. ^{[3
,4
]}

Geim, A. K. ^{[3
,4
]}

Guinea, F. ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[2] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands

[3] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[4] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 26期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevLett.105.266601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T greater than or similar to 10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m(2)/Vs at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.

引用

页数：4

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