Surface reconstruction, screw dislocations and anisotropic step flow growth of MnAs on GaAs(111)B substrates

被引：28

作者：

Kästner, M ^{[1
]}

Däweritz, L ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

SURFACE SCIENCE | 2002年 / 511卷 / 1-3期

关键词：

molecular beam epitaxy; scanning tunneling microscopy; step formation and bunching; surface relaxation and reconstruction; surface structure; morphology; toughness; and topography; metal-semiconductor magnetic thin film structures; gallium arsenide; manganese;

D O I：

10.1016/S0039-6028(02)01515-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have grown MnAs layers on GaAs(111)B substrates by molecular beam epitaxy and studied their morphology in situ by scanning tunneling microscopy. The surface was atomically flat with bilayer-steps and a (2 x 2) reconstruction on the terraces. Screw dislocations with associated growth spirals were observed. Positive and negative Burgers vectors were found with equal probability. We also observed steps with alternately smooth and jagged edges. This morphology is explained by the anisotropic growth speed of bilayer-steps. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：323 / 330

页数：8

共 30 条

[1] RECONSTRUCTIONS OF GAAS(1BAR1BAR1BAR) SURFACES OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW LETTERS, 1990, 65 (04) :452-455

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[3] MBE growth, structure and magnetic properties of MnAs on GaAs on a microscopic scale [J].

Däweritz, L ;

Schippan, F ;

Trampert, A ;

Kästner, M ;

Behme, G ;

Wang, ZM ;

Moreno, M ;

Schützendübe, P ;

Ploog, KH .

JOURNAL OF CRYSTAL GROWTH, 2001, 227 :834-838

[4]

GROSS R, 1918, ABH SACHS GES, V35, P137

[5] ELECTRONIC STATE OF HIGH-SPIN MNAS [J].

HANEDA, S ;

KAZAMA, N ;

YAMAGUCHI, Y ;

WATANABE, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 42 (04) :1201-1211

[6] Spiral surface growth without desorption [J].

Karma, A ;

Plapp, M .

PHYSICAL REVIEW LETTERS, 1998, 81 (20) :4444-4447

[7]

Kleber W., 1983, EINFUHRUNG KRISTALLO

[8] EPITAXIAL-GROWTH AND THE ART OF COMPUTER-SIMULATIONS [J].

METIU, H ;

LU, YT ;

ZHANG, ZY .

SCIENCE, 1992, 255 (5048) :1088-1092

[9] INVERSION OF GROWTH SPEED ANISOTROPY IN 2-DIMENSIONS [J].

MICHELY, T ;

HOHAGE, M ;

BOTT, M ;

COMSA, G .

PHYSICAL REVIEW LETTERS, 1993, 70 (25) :3943-3946

[10] GROWTH AND EQUILIBRIUM STRUCTURES IN THE EPITAXY OF SI ON SI(001) [J].

MO, YW ;

SWARTZENTRUBER, BS ;

KARIOTIS, R ;

WEBB, MB ;

LAGALLY, MG .

PHYSICAL REVIEW LETTERS, 1989, 63 (21) :2393-2396

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