Surface reconstruction, screw dislocations and anisotropic step flow growth of MnAs on GaAs(111)B substrates

被引：28

作者：

Kästner, M ^{[1
]}

Däweritz, L ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

SURFACE SCIENCE | 2002年 / 511卷 / 1-3期

关键词：

molecular beam epitaxy; scanning tunneling microscopy; step formation and bunching; surface relaxation and reconstruction; surface structure; morphology; toughness; and topography; metal-semiconductor magnetic thin film structures; gallium arsenide; manganese;

D O I：

10.1016/S0039-6028(02)01515-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have grown MnAs layers on GaAs(111)B substrates by molecular beam epitaxy and studied their morphology in situ by scanning tunneling microscopy. The surface was atomically flat with bilayer-steps and a (2 x 2) reconstruction on the terraces. Screw dislocations with associated growth spirals were observed. Positive and negative Burgers vectors were found with equal probability. We also observed steps with alternately smooth and jagged edges. This morphology is explained by the anisotropic growth speed of bilayer-steps. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：323 / 330

页数：8

共 30 条

[21] FORMATION OF BILAYER STEPS DURING GROWTH AND EVAPORATION OF SI(001) VICINAL SURFACES [J].

STOYANOV, S .

EUROPHYSICS LETTERS, 1990, 11 (04) :361-366

[22] Atomic-scale surface morphology of epitaxial ferromagnetic MnAs thin films grown on vicinal GaAs(111)B substrates [J].

Sugahara, S ;

Tanaka, M .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6677-6679

[23] EPITAXIAL FERROMAGNETIC MNAS THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS - STRUCTURE AND MAGNETIC-PROPERTIES [J].

TANAKA, M ;

HARBISON, JP ;

PARK, MC ;

PARK, YS ;

SHIN, T ;

ROTHBERG, GM .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) :6278-6280

[24] Epitaxial MnAs/GaAs/MnAs trilayer magnetic heterostructures [J].

Tanaka, M ;

Saito, K ;

Nishinaga, T .

APPLIED PHYSICS LETTERS, 1999, 74 (01) :64-66

[25] Recent developments in Magnetic Tunnel Junction MRAM [J].

Tehrani, S ;

Engel, B ;

Slaughter, JM ;

Chen, E ;

DeHerrera, M ;

Durlam, M ;

Naji, P ;

Whig, R ;

Janesky, J ;

Calder, J .

IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) :2752-2757

[26] Transition from island growth to step-flow growth for Si/Si(100) epitaxy [J].

Voigtlander, B ;

Weber, T ;

Smilauer, P ;

Wolf, DE .

PHYSICAL REVIEW LETTERS, 1997, 78 (11) :2164-2167

[27] Growth processes in Si/Si(111) epitaxy observed by scanning tunneling microscopy during epitaxy [J].

Voigtlander, B ;

Weber, T .

PHYSICAL REVIEW LETTERS, 1996, 77 (18) :3861-3864

[28] Magic islands in Si/Si(111) homoepitaxy [J].

Voigtlander, B ;

Kastner, M ;

Smilauer, P .

PHYSICAL REVIEW LETTERS, 1998, 81 (04) :858-861

[29] Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy [J].

Xie, MH ;

Seutter, SM ;

Zhu, WK ;

Zheng, LX ;

Wu, HS ;

Tong, SY .

PHYSICAL REVIEW LETTERS, 1999, 82 (13) :2749-2752

[30] Evolution of the ferromagnetic phase of ultrathin Fe films grown on GaAs(100)-4x6 [J].

Xu, YB ;

Kernohan, ETM ;

Freeland, DJ ;

Ercole, A ;

Tselepi, M ;

Bland, JAC .

PHYSICAL REVIEW B, 1998, 58 (02) :890-896

← 1 2 3 →