Optically switched conductivity of epitaxial diamond on nitrogen doped diamond substrates

被引：4

作者：

Geis, MW ^{[1
]}

Krohn, KE

Lawless, JM

Deneault, SJ

Marchant, MF

Twichell, JC

Lyszczarz, TM

Butler, JE

Flechtner, DD

Wright, R

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Diamond Microelect Corp, Santa Monica, CA 90402 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 23期

关键词：

D O I：

10.1063/1.1757637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial diamond with remarkably low p-type doping (1x10(14)-1x10(17) cm(-3)) and exceptionally low compensation similar to1x10(13) cm(-3), has enabled the demonstration of a optically-switched conduction modulation of the epitaxial layer. Charge exchange between the diamond substrate and the epitaxial layer makes it possible to modulate the conductivity of the epitaxial layer. Incandescent light will make the lightly p-doped epitaxial layer insulating and ultraviolet radiation will make the layer conductive again. Once the layer conductivity has been established it will remain in the same electrical state for days, if kept in the dark. (C) 2004 American Institute of Physics.

引用

页码：4620 / 4622

页数：3

共 8 条

[1] Exceptionally high voltage Schottky diamond diodes and low boron doping [J].

Butler, JE ;

Geis, MW ;

Krohn, KE ;

Lawless, J ;

Deneault, S ;

Lyszczarz, TM ;

Flechtner, D ;

Wright, R .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (03) :S67-S71

[2]

COLLINS AT, 1979, PROPERTIES DIAMOND, P79

[3] HIGH-CONDUCTANCE, LOW-LEAKAGE DIAMOND SCHOTTKY DIODES [J].

GEIS, MW ;

EFREMOW, NN ;

VONWINDHEIM, JA .

APPLIED PHYSICS LETTERS, 1993, 63 (07) :952-954

[4] Diamond emitters fabrication and theory [J].

Geis, MW ;

Twichell, JC ;

Lyszczarz, TM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2060-2067

[5] High carrier mobility in single-crystal plasma-deposited diamond [J].

Isberg, J ;

Hammersberg, J ;

Johansson, E ;

Wikström, T ;

Twitchen, DJ ;

Whitehead, AJ ;

Coe, SE ;

Scarsbrook, GA .

SCIENCE, 2002, 297 (5587) :1670-1672

[6]

PARK ED, 1985, HDB OPTICAL CONSTANT, P670

[7]

Selmi L., 1999, FLASH MEMORIES, P153

[8] Passivation of boron in diamond by deuterium [J].

Zeisel, R ;

Nebel, CE ;

Stutzmann, M .

APPLIED PHYSICS LETTERS, 1999, 74 (13) :1875-1876

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