A 175-mV multiply-accumulate unit using an adaptive supply voltage and body bias architecture

被引:137
作者
Kao, JT
Miyazaki, M
Chandrakasan, AP
机构
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
[2] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
关键词
active power; adaptive body biasing; body biasing; dynamic power; dynamic voltage scaling; low power; subthreshold leakage; triple well;
D O I
10.1109/JSSC.2002.803957
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to minimize total active power consumption in digital circuits, one must take into account subthreshold leakage currents that grow exponentially as technology scales. This research develops a theoretical model to predict how dynamic power and subthreshold power must be balanced to give an optimal V-DD - V-t operating point that minimizes total active power consumption for different workload and operating conditions. A 175-mV multiply-accumulate test chip using a triple-well technology with tunable supply and body bias values is measured to experimentally verify the tradeoffs between the various sources of power. The test chip shows that there is an optimum V-DD - V-t operating point, although it differs from the theoretical limit because of excessive forward bias currents. Finally, we propose a preliminary automatic supply and body biasing architecture (ASB) that automatically configures a circuit to operate with the lowest possible active power consumption.
引用
收藏
页码:1545 / 1554
页数:10
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