Potential fluctuations due to P-b centres at the Si/SiO2 interface

被引：25

作者：

Uren, MJ

Brunson, KM

Stathis, JH

Cartier, E

机构：

[1] Defence Research Agency, Malvern

[2] IBM Research Division, T J Watson Research Center, Yorktown Heights, NY

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

(100)SI/SIO2 INTERFACE; PERSPECTIVE; CENTERS; STATES;

D O I：

10.1016/S0167-9317(97)00052-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that the potential fluctuation model of Brews applies very accurately to P-b centres at the (111) and (100) interfaces. Vacuum annealed MOS samples were used which contained a particularly 'pure' interface largely dominated by the P-b-like defects. For the (100) interface, P-b0 and P-b1 defects appear to have the same capture cross-section.

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收藏

页码：219 / 222

页数：4

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