High mobility ZnO nanowires for terahertz detection applications

被引：13

作者：

Liu, Huiqiang ^{[1
,2
]}

Peng, Rufang ^{[2
]}

Chu, Sheng ^{[1
]}

Chu, Shijin ^{[2
]}

机构：

[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[2] Southwest Univ Sci & Technol, State Key Lab Cultivat Base Nonmet Composites & F, Mianyang 621010, Sichuan, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 04期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; NONRESONANT DETECTION; RADIATION; SPECTROSCOPY; TECHNOLOGY;

D O I：

10.1063/1.4891958

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (similar to 0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 36 条

[1]

Conductivity of ZnO nanowires, nanoparticles, and thin films using time-resolved terahertz spectroscopy [J].