Anderson transition in disordered graphene

被引:33
作者
Amini, M. [1 ]
Jafari, S. A. [1 ,2 ]
Shahbazi, F. [1 ]
机构
[1] Isfahan Univ Technol, Dept Phys, Esfahan 8415483111, Iran
[2] Abdus Salam Int Ctr Theoret Phys, I-34100 Trieste, Italy
关键词
SYSTEMS; STATES;
D O I
10.1209/0295-5075/87/37002
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We use the regularized kernel polynomial method (RKPM) to numerically study the effect disorder on a single layer of graphene. This accurate numerical method enables us to study very large lattices with millions of sites, and hence is almost free of finite-size errors. Within this approach, both weak- and strong-disorder regimes are handled on the same footing. We study the tight-binding model with on-site disorder, on the honeycomb lattice. We find that in the weak-disorder regime, the Dirac fermions remain extended and their velocities decrease as the disorder strength is increased. However, if the disorder is strong enough, there will be a mobility edge separating localized states around the Fermi point, from the remaining extended states. Copyright (C) EPLA, 2009
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页数:5
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