Resistive, Switching Characteristics of Sol-Gel Zinc Oxide Films for Flexible Memory Applications

被引：149

作者：

Kim, Sungho ^{[1
]}

Moon, Hanul ^{[1
]}

Gupta, Dipti ^{[1
]}

Yoo, Seunghyup ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 04期

关键词：

Flexible; resistance random access memory (RRAM); resistive switching; sol-gel; zinc oxide (ZnO); THIN-FILMS;

D O I：

10.1109/TED.2009.2012522

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

Unipolar resistive switching devices are investigated for nonvolatile memory applications in a metal-insulator-metal structure in which the insulator layer is based on sol-gel-derived zinc oxide (ZnO) films prepared by a simple spin-coating process followed by thermal annealing. Fast programming (<= 50 ns) and a high off-to-on resistance ratio (> 10(4)) is demonstrated. The influences on the switching behaviors according to the crystallinity of the ZnO films are studied as a function of the annealing temperature. In addition, the devices are fabricated on a flexible plastic substrate and exhibit excellent durability upon repeated bending tests, demonstrating their potential for flexible low-cost memory devices.

引用

页码：696 / 699

页数：4

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