Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

被引：32

作者：

Ishikawa, H ^{[1
]}

Asano, K

Zhang, B

Egawa, T

Jimbo, T

机构：

[1] Nagoya Inst Technol, Res Ctr Nano Device & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2004年 / 201卷 / 12期

关键词：

D O I：

10.1002/pssa.200405002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the improved characteristics of GaInN light-emitting diodes (LEDs) on Si substrates by a distributed Bragg reflector (DBR). The DBR-based GaInN multi quantum-well LED structures were grown on n-Si (111) substrates using a conventional horizontal metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in the DBR was changed from 1 to 5. The measured PL peak intensity ratio agrees well with the calculated value. In an EL measurement, the output power increases with an increase in the number of pairs in the DBR (less than 3 pairs). The light output power of a 3-pair DBR-based LED is approximately twofold larger than that of a non-DBR-based LED. However, it significantly decreases in a 5 pair of DBR, because of a crack formation. Although the suppression of crack formation remains a problem, the DBR is still very promising for the fabrication of high-performance LEDs on Si. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2653 / 2657

页数：5

共 14 条

[1] Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111):: Impact of an AlGaN/GaN multilayer [J].

Dadgar, A ;

Christen, J ;

Riemann, T ;

Richter, S ;

Bläsing, J ;

Diez, A ;

Krost, A ;

Alam, A ;

Heuken, M .

APPLIED PHYSICS LETTERS, 2001, 78 (15) :2211-2213

[2] Improved characteristics of blue and green InGaN-based light-enfitting diodes on Si grown by metalorganic chemical vapor deposition [J].

Egawa, T ;

Moku, T ;

Ishikawa, H ;

Ohtsuka, K ;

Jimbo, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (6B) :L663-L664

[3] InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition [J].

Egawa, T ;

Zhang, B ;

Nishikawa, N ;

Ishikawa, H ;

Jimbo, T ;

Umeno, M .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) :528-530

[4] Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy [J].

Feltin, E ;

Dalmasso, S ;

de Mierry, P ;

Beaumont, B ;

Lahrèche, H ;

Bouillé, A ;

Haas, H ;

Leroux, M ;

Gibart, P .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (7B) :L738-L740

[5]

Franta D, 2000, ACTA PHYS SLOVACA, V50, P411

[6] Ultraviolet and violet GaN light emitting diodes on silicon [J].

Guha, S ;

Bojarczuk, NA .

APPLIED PHYSICS LETTERS, 1998, 72 (04) :415-417

[7] GaN on Si substrate with AlGaN/AlN intermediate layer [J].

Ishikawa, H ;

Zhao, GY ;

Nakada, N ;

Egawa, T ;

Jimbo, T ;

Umeno, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5A) :L492-L494

[8] HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES [J].

LESTER, SD ;

PONCE, FA ;

CRAFORD, MG ;

STEIGERWALD, DA .

APPLIED PHYSICS LETTERS, 1995, 66 (10) :1249-1251

[9] Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire [J].

Nakada, N ;

Nakaji, M ;

Ishikawa, H ;

Egawa, T ;

Umeno, M ;

Jimbo, T .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1804-1806

[10] Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy [J].

Tran, CA ;

Osinski, A ;

Karlicek, RF ;

Berishev, I .

APPLIED PHYSICS LETTERS, 1999, 75 (11) :1494-1496

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