Improved characteristics of blue and green InGaN-based light-enfitting diodes on Si grown by metalorganic chemical vapor deposition

被引：91

作者：

Egawa, T ^{[1
]}

Moku, T

Ishikawa, H

Ohtsuka, K

Jimbo, T

机构：

[1] Nagoya Inst Technol, Res Ctr Microstruct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Sanken Elect Co Ltd, Semicond Res & Dev, Niiza 3528666, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 6B期

关键词：

InGaN; LED on Si; MOCVD; AIN layer; AIN/GaN multilayers;

D O I：

10.1143/JJAP.41.L663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report significantly improved characteristics of InGaN multiple-quantum well blue and green light-emitting diodes (LEDs) on Si (I 11) substrates using metalorganic chemical vapor deposition. A high-temperature-grown thin AIN layer and AIN/GaN multilayers have been used for the growth of high-quality active layer on Si substrate. The blue LED on Si exhibited an operating voltage of 4.1 V, a series resistance of 30 Omega, an optical output power of 18 muW and a peak emission wavelength of 478 nm with a full width at half maximum of 22 nm at 20 mA drive current. These characteristics are comparable to those of LED on sapphire substrate. The green LED was also fabricated on Si substrate successfully.

引用

收藏

页码：L663 / L664

页数：2

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