Epitaxial growth of SiO2 produced in silicon by oxygen ion implantation

被引：28

作者：

Afanas'ev, VV ^{[1
]}

Stesmans, A ^{[1
]}

Twigg, ME ^{[1
]}

机构：

[1] USN, RES LAB, DIV ELECT TECHNOL, WASHINGTON, DC 20375 USA

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.77.4206

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Oxide layers produced hy implantation of (001) silicon with oxygen were found to contain a crystalline phase in registry with the Si substrate. The crystals resemble the coesite phase of SiO(2) with the b axis oriented along a [001] Si substrate direction. Formation of oxide crystals requires confinement of the oxide layer between two silicon layers, indicating the necessity of high pressure for epitaxial growth.

引用

页码：4206 / 4209

页数：4

共 22 条

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