Material and device consideration for high efficiency a-Si alloy-based multijunction cells

被引:10
作者
Guha, S
机构
[1] United Solar Systems Corp., Troy, MI 48084
关键词
D O I
10.1016/0022-3093(96)00047-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
It is now well-recognized that multi-bandgap triple-junction structures offer the attractive potential of achieving high efficiency with good stability in amorphous silicon alloy solar cells. Although stable cell efficiency exceeding 11% has been demonstrated, significant improvement in our understanding of materials and devices is necessary to reach the goal of 16% stable cell efficiency. Choice of suitable precursors in the plasma and control of growth kinetics will play a key role in improving material property. Innovative device design to aid minority carrier transport will help in obtaining the highest efficiency from a given material. In this paper, the critical issues regarding the optimization of materials and devices to obtain high stable efficiency are discussed.
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页码:1076 / 1080
页数:5
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