Characterization of Al2O3 Thin Films Fabricated at Low Temperature via Atomic Layer Deposition on PEN Substrates

被引：11

作者：

Choi, Kyung-Hyun ^{[1
]}

Ali, Kamran ^{[1
]}

Kim, Chang Young ^{[2
,3
]}

Muhammad, Nauman Malik ^{[4
]}

机构：

[1] Jeju Natl Univ, Dept Mechatron Engn, Cheju 690756, South Korea

[2] Jeju Natl Univ, Res Inst Basic Sci, Cheju 690756, South Korea

[3] Jeju Natl Univ, Dept Phys, Cheju 690756, South Korea

[4] Yildirim Beyazit Univ, Dept Mech Engn, Ankara, Turkey

来源：

CHEMICAL VAPOR DEPOSITION | 2014年 / 20卷 / 4-6期

关键词：

Al2O3; ALD; Film properties; Low temperature; PEN; XPS; ALUMINUM; POLYMER; SILICON; ATOMIZATION; KINETICS; BEHAVIOR; GROWTH; CELLS; TIO2; H2O;

D O I：

10.1002/cvde.201307082

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Good quality Al2O3 thin films are deposited on polyethylene naphthalate (PEN) substrates through atomic layer deposition (ALD) at temperatures as low as 35 degrees C. Trimethylaluminum [TMA, Al(CH3)(3)] and water are used as precursors in the present study. Growth rates of 1.14 angstrom per cycle are observed at 35 degrees C, while the average arithmetic roughness (Ra) of the film is 0.86 nm. X-ray photoelectron spectroscopy (XPS) analysis confirms the high purity of the grown films with no carbon contamination. Good insulating properties are observed for the films and optical transmittance of more than 90% is recorded in the visible region.

引用

页码：118 / 124

页数：7

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