Thermodynamic aspects of the GaN deposition from the gaseous phase

被引：10

作者：

Leitner, J

Stejskal, J

Vonka, P

机构：

[1] INST CHEM TECHNOL, DEPT INORGAN CHEM, PRAGUE 16628 6, CZECH REPUBLIC

[2] INST CHEM TECHNOL, DEPT PHYS CHEM, PRAGUE 16628 6, CZECH REPUBLIC

来源：

MATERIALS LETTERS | 1996年 / 28卷 / 1-3期

关键词：

gallium nitride; VPE; MOCVD; thermodynamic properties; equilibrium calculations;

D O I：

10.1016/0167-577X(96)00057-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On the basis of the thorough thermodynamic analysis feasible conditions for the deposition of GaN epitaxial layers in the hydride and metalorganic systems were determined. The optimized thermodynamic data for solid GaN were used for the equilibrium calculations. Good agreement between the calculated and experimental results was achieved.

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页码：197 / 201

页数：5

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