Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

被引：17

作者：

Detavernier, C

Van Meirhaeghe, RL

Vandervorst, W

Maex, K

机构：

[1] Univ Ghent, Vakgroep Vaste Stofwetenschappen, B-9000 Ghent, Belgium

[2] IMEC, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 71卷 / 3-4期

关键词：

D O I：

10.1016/j.mee.2003.12.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

The formation of cobalt silicide by the reaction of a Co layer with a Si substrate is known to be sensitive to the presence of oxygen contamination in the reaction region. A layer of Ti deposited on top of the Co is known to getter oxygen impurities. However, the presence of a Ti capping layer induces; two additional effects: firstly, the nucleation temperature of CoSi2 is increased by 60-80 degreesC. Secondly, the CoSi2 that is formed in the presence of a Ti capping layer has a preferential (2 2 0) and (4 0 0) orientation. A detailed study is presented on the influence of several processing parameters (annealing temperature, selective etching, layer thickness) oil the nucleation temperature and preferential orientation of CoSi2 in the Ti/Co/Si system. (C) 2003 Elsevier B.V. Ail rights reserved.

引用

页码：252 / 261

页数：10

共 20 条

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STUDY OF COBALT-DISILICIDE FORMATION FROM COBALT MONOSILICIDE [J].