Localization and capacitance fluctuations in disordered Au nanojunctions

被引:9
作者
Bowman, M [1 ]
Anaya, A [1 ]
Korotkov, AL [1 ]
Davidovic, D [1 ]
机构
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
关键词
D O I
10.1103/PhysRevB.69.205405
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanojunctions, containing atomic-scale gold contacts between strongly disordered leads, exhibit different transport properties at room temperature and at low temperature. At room temperature, the nanojunctions exhibit conductance quantization effects. At low temperatures, the contacts exhibit Coulomb blockade. We show that the differences between the room-temperature and low-temperature properties arise from the localization of electronic states in the leads. The charging energy and capacitance of the nanojunctions exhibit strong fluctuations, with applied magnetic field at low temperature, as predicted theoretically.
引用
收藏
页码:205405 / 1
页数:8
相关论文
共 32 条
[1]   Quantum properties of atomic-sized conductors [J].
Agraït, N ;
Yeyati, AL ;
van Ruitenbeek, JM .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2003, 377 (2-3) :81-279
[2]   CONDUCTANCE STEPS AND QUANTIZATION IN ATOMIC-SIZE CONTACTS [J].
AGRAIT, N ;
RODRIGO, JG ;
VIEIRA, S .
PHYSICAL REVIEW B, 1993, 47 (18) :12345-12348
[3]  
Altshuler B. L., 1985, ELECT ELECT INTERACT
[4]   Nanometer-scale metallic grains connected with atomic-scale conductors [J].
Anaya, A ;
Korotkov, AL ;
Bowman, M ;
Waddell, J ;
Davidovic, D .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) :3501-3508
[5]  
[Anonymous], MESOSCOPIC PHENOMENA
[6]   CORRELATED SINGLE-ELECTRON TUNNELING VIA MESOSCOPIC METAL PARTICLES - EFFECTS OF THE ENERGY QUANTIZATION [J].
AVERIN, DV ;
KOROTKOV, AN .
JOURNAL OF LOW TEMPERATURE PHYSICS, 1990, 80 (3-4) :173-185
[7]   Transport properties of granular metals at low temperatures [J].
Beloborodov, IS ;
Efetov, KB ;
Lopatin, AV ;
Vinokur, VM .
PHYSICAL REVIEW LETTERS, 2003, 91 (24)
[8]   Quantum interference and Coulomb interaction in arrays of tunnel junctions [J].
Beloborodov, IS ;
Efetov, KB ;
Altland, A ;
Hekking, FWJ .
PHYSICAL REVIEW B, 2001, 63 (11)
[9]   Atom-size gaps and contacts between electrodes fabricated with a self-terminated electrochemical method [J].
Boussaad, S ;
Tao, NJ .
APPLIED PHYSICS LETTERS, 2002, 80 (13) :2398-2400
[10]   SINGLE-ELECTRON CHARGING EFFECTS IN INSULATING WIRES [J].
CHANDRASEKHAR, V ;
OVADYAHU, Z ;
WEBB, RA .
PHYSICAL REVIEW LETTERS, 1991, 67 (20) :2862-2865