Recent Advances in Two-Dimensional Materials beyond Graphene

被引:2224
作者
Bhimanapati, Ganesh R. [1 ]
Lin, Zhong [2 ]
Meunier, Vincent [5 ,6 ]
Jung, Yeonwoong [3 ]
Cha, Judy [4 ]
Das, Saptarshi [7 ,8 ]
Xiao, Di [9 ]
Son, Youngwoo [10 ]
Strano, Michael S. [10 ]
Cooper, Valentino R. [11 ,12 ]
Liang, Liangbo [5 ,6 ]
Louie, Steven G. [13 ,17 ]
Ringe, Emilie [19 ]
Zhou, Wu [11 ,12 ]
Kim, Steve S. [14 ,15 ]
Naik, Rajesh R. [14 ]
Sumpter, Bobby G. [11 ,12 ]
Terrones, Humberto [6 ]
Xia, Fengnian [16 ]
Wang, Yeliang [18 ]
Zhu, Jun [2 ]
Akinwande, Deji [20 ]
Alem, Nasim [1 ]
Schuller, Jon A. [21 ]
Schaak, Raymond E. [22 ,23 ]
Terrones, Mauricio [1 ,2 ,22 ,23 ]
Robinson, Joshua A. [1 ]
机构
[1] Penn State Univ, Ctr Dimens & Layered Mat 2, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Ctr Dimens & Layered Mat 2, Dept Phys, University Pk, PA 16802 USA
[3] Univ Cent Florida, Dept Mat Sci & Engn, Nanosci Technol Ctr, Orlando, FL 32826 USA
[4] Yale Univ, Sch Engn & Appl Sci, Dept Mech Engn & Mat Sci, New Haven, CT 06520 USA
[5] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[6] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[7] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[8] Purdue Univ, Dept ECE, W Lafayette, IN 47907 USA
[9] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[10] MIT, Dept Chem Engn, Cambridge, MA 02139 USA
[11] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[12] Oak Ridge Natl Lab, Div Math & Comp Sci, Oak Ridge, TN 37831 USA
[13] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[14] Air Force Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[15] UES Inc, Beavercreek, OH 45432 USA
[16] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
[17] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
[18] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
[19] Rice Univ, Dept Mat Sci & Nano Engn, Houston, TX 77005 USA
[20] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[21] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[22] Penn State Univ, Dept Chem, University Pk, PA 16802 USA
[23] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
two-dimensional materials; graphene; heterostructures; transition metal dichalcogenide; phospherene; silicene; germanene; stanene; van der Waals epitaxy; van der Waals solid; TRANSITION-METAL-DICHALCOGENIDE; CHEMICAL-VAPOR-DEPOSITION; DENSITY-FUNCTIONAL THEORY; FIELD-EFFECT TRANSISTORS; HEXAGONAL BORON-NITRIDE; LARGE-AREA SYNTHESIS; DER-WAALS HETEROSTRUCTURES; MOLYBDENUM-DISULFIDE FILMS; MOLECULAR-BEAM EPITAXY; HIGH-QUALITY MONOLAYER;
D O I
10.1021/acsnano.5b05556
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The isolation of graphene in 2004 from graphite was a defining moment for the "birth" of a field: two-dimensional (20) materials. In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement. Here, we review significant recent advances and important new developments in 2D materials "beyond graphene". We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 20 layers in bulk solids, as well as their excitonic properties and growth morphologies. Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 20 materials (i.e., silicene, phosphorene, etc.) and transition metal carbide- and carbon nitride-based MXenes. We then discuss the doping and functionalization of 2D materials beyond graphene that enable device applications, followed by advances in electronic, optoelectronic, and magnetic devices and theory. Finally, we provide perspectives on the future of 20 materials beyond graphene.
引用
收藏
页码:11509 / 11539
页数:31
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