Electromigration study of high lead solders in flip-chip packages using the wheatstone bridge method

被引：11

作者：

Ding, M ^{[1
]}

Matsuhashi, H ^{[1
]}

Wang, GT ^{[1
]}

Ho, PS ^{[1
]}

Marathe, A ^{[1
]}

Master, R ^{[1
]}

Pham, V ^{[1
]}

机构：

[1] Univ Texas, PRC, MER, Lab Interconnect & Packaing, Austin, TX 78712 USA

来源：

54TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/ECTC.2004.1319456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new approach based on the Wheatstone bridge method was employed to investigate electromigration behavior of high lead solder balls in flip chip CPGA packages. EM tests at four temperatures were performed with a current density of 1.1 x 10(4) A/cm(2). Electromigration failure was observed only in solder balls with electron current flow from UBM to the substrate. SEM/EDS analysis revealed mass migration of Pb, Sri and Cu along the electron flow direction resulting in the dissolution Of Cu3Sn compound. The depletion Of Cu3Sn induced dewetting and crack formation at UBM/solder interface. Subsequent growth of interfacial crack under E caused the final open failure of the solder ball. EM damage evolution was found to follow 3 stages: (i) Cu3Sn formation and dissolution, (ii) crack growth, (iii) open failure. The E activation energy of 97Pb/3Sn solder ball was determined to be 0.91 +/- 0.19 eV. Test data also indicated that stress can superimpose onto EM to degrade solder reliability.

引用

页码：968 / 973

页数：6

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