A study of interface states of directly bonded silicon-on-insulator structures

被引：6

作者：

Buldygin, SA ^{[1
]}

Golod, SV ^{[1
]}

Kamaev, GN ^{[1
]}

Skok, EM ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 1-3期

关键词：

silicon-on-insulator; bonding; interface defects; microwave transient photoconductivity;

D O I：

10.1016/S0022-0248(99)00657-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The traps at the interface of directly bonded silicon-on-insulator structures have been investigated for the first time using a contactless and nondestructive computer controlled microwave transient photoconductivity method. It is shown that during bonding process electrically active states appear at the interface. The values of activation energies and capture cross-sections of charge carriers are obtained which are associated with the presence of the interface states similar to those at the Si/thermal oxide interface. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：107 / 111

页数：5

共 7 条

[1] Computer controlled microwave transient photoconductivity for the nondestructive characterization of GaAs substrates [J].

Buldygin, SA ;

Golod, SV ;

Preobrazhenskii, VV ;

Semyagin, BP ;

Skok, EM ;

Tarlo, DG .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3) :223-227

[2]

BULDYGIN SA, I PHYSICS C SERIES, V160, P277

[3]

ERANEN S, 1984, J APPL PHYS, V56, P2372, DOI 10.1063/1.334254

[4] NONCONTACT CHARACTERIZATION FOR CARRIER RECOMBINATION CENTER RELATED TO SI-SIO2 INTERFACE [J].

KATAYAMA, K ;

SHIMURA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (3B) :L395-L397

[5] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J].

LASKY, JB .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :78-80

[6] INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS [J].

POINDEXTER, EH ;

CAPLAN, PJ ;

DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :879-884

[7] NEW INSIGHTS ON THE ELECTRONIC-PROPERTIES OF THE TRIVALENT SILICON DEFECTS AT OXIDIZED (100) SILICON SURFACES [J].

VUILLAUME, D ;

GOGUENHEIM, D ;

VINCENT, G .

APPLIED PHYSICS LETTERS, 1990, 57 (12) :1206-1208

← 1 →