Field emission properties of carbon nanotube arrays through the pattern transfer process

被引：52

作者：

Chiu, Chien-Chao ^{[1
]}

Tsai, Tsung-Yen ^{[1
]}

Tai, Nyan-Hwa ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 12期

关键词：

D O I：

10.1088/0957-4484/17/12/002

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A process for transferring carbon nanotube ( CNT) arrays from a silicon wafer to an alumina substrate coated with Ag paste is proposed. A current density of up to 325 mA cm(-2) at an electric field of 2.4 V mu m(-1) was achieved. The influence of the patterned size and the length of carbon nanotubes on the field emission properties were investigated. Through this transfer method, the adhesion between the CNTs and the substrate is enhanced and the current density and turn-on voltage are improved. The effects of the microstructure of the emitting sites at the CNT tip on the current density were also studied.

引用

页码：2840 / 2844

页数：5

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