Temperature-dependent optical anisotropy of the vicinal Si(001):(2x1) surface

被引：27

作者：

Cole, RJ ^{[2
]}

Tanaka, S

Gerber, P

Power, JR

Farrell, T

Weightman, P

机构：

[1] UNIV LIVERPOOL,DEPT PHYS,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

[2] UNIV LIVERPOOL,SURFACE SCI RES CTR,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.54.13444

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reflectance anisotropy spectroscopy (RAS) has become a powerful surface characterization tool in semiconductor physics. To clarify the origins of RAS spectra model systems are currently being studied. Kerr we study the temperature dependence of the RAS spectrum of the Si(001) surface. The intensity of the positive RAS peak at 4.3 eV is found to provide a direct measure of the (2 x 1):(1 x 2) domain ratio, while the broad negative trough centered on about 3 eV shows variation of fine shape as well as intensity with temperature. The origins of these features are discussed.

引用

页码：13444 / 13447

页数：4

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