Gas-phase nanoparticle formation during AlGaN metalorganic vapor phase epitaxy

被引:47
作者
Creighton, JR [1 ]
Breiland, WG [1 ]
Coltrin, ME [1 ]
Pawlowski, RP [1 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
D O I
10.1063/1.1510580
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using in situ laser light scattering, we have directly observed the formation of gas-phase nanoparticles during AlN, GaN, and AlGaN metalorganic vapor phase epitaxy. The nanoparticles are sharply distributed in height 6 mm from the surface, in good agreement with a model based on a balance between thermophoretic and convective forces. By measuring the angular dependence of the scattering intensity, we determined that the AlN particle sizes were 35-50 nm, and particle densities were 1-6x10(8) cm(-3), which corresponds to 20%-80% of the input Al being converted into nanoparticles. (C) 2002 American Institute of Physics.
引用
收藏
页码:2626 / 2628
页数:3
相关论文
共 12 条
[1]   A study of parasitic reactions between NH3 and TMGa or TMAI [J].
Chen, CH ;
Liu, H ;
Steigerwald, D ;
Imler, W ;
Kuo, CP ;
Craford, MG ;
Ludowise, M ;
Lester, S ;
Amano, J .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (06) :1004-1008
[2]  
Creighton JR, 2002, ELEC SOC S, V2002, P28
[3]  
FRIEDLANDER SK, 2000, SMOKE DUST HAZE FUND, P50
[4]   OMVPE growth and gas-phase reactions of AlGaN for UV emitters [J].
Han, J ;
Figiel, JJ ;
Crawford, MH ;
Banas, MA ;
Bartram, ME ;
Biefeld, RM ;
Song, YK ;
Nurmikko, AV .
JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :291-296
[5]   CVD IN STAGNATION POINT FLOW - AN EVALUATION OF THE CLASSICAL 1D-TREATMENT [J].
HOUTMAN, C ;
GRAVES, DB ;
JENSEN, KF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (05) :961-970
[6]   A reaction-transport model for AlGaN MOVPE growth [J].
Mihopoulos, TG ;
Gupta, V ;
Jensen, KF .
JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :733-739
[7]   AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition [J].
Nakamura, F ;
Hashimoto, S ;
Hara, M ;
Imanaga, S ;
Ikeda, M ;
Kawai, H .
JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :280-285
[8]   GaN growth by metallorganic vapor phase epitaxy - A comparison of modeling and experimental measurements [J].
Safvi, SA ;
Redwing, JM ;
Tischler, MA ;
Kuech, TF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (05) :1789-1796
[9]  
SALINGER AG, SAND9623111996 SAND
[10]   THE INFLUENCE OF TMA AND SIH4 ON THE INCORPORATION RATE OF GA IN ALXGA1-XN CRYSTALS GROWN FROM TMG AND NH3 [J].
SAYYAH, K ;
CHUNG, BC ;
GERSHENZON, M .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :424-429