Reliability projection and polarity dependence of TDDB for ultra thin CVD HfO2 gate dielectrics

被引：31

作者：

Lee, SJ ^{[1
]}

Rhee, SJ ^{[1
]}

Clark, R ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A systematic study of long-term reliability of ultra thin CVD HfO2 gate stack (EOT=10.5Angstrom) with TaN gate electrode is presented. The polarity and area dependence and temperature acceleration of time-to-breakdown (T-BD), defect generation rate, and critical defect density are studied. It is found that TBD is polarity-independent (T-BD,T--Vg=T-BD,T--Vg). TDDB lifetime acceleration shows that 10-year lifetime of HfO2 gate stack is projected at Vg=1.63V for EOT=8.6Angstrom and Vg=1.88V for EOT=10.6Angstrom at 25degreesC. However, after temperature acceleration of 150degreesC, area scaling to 0.1cm(2), and the projection to low percentage failure rate of 0.01%, the maximum operating voltages are projected to be Vg=0.6V for EOT=8.6Angstrom and Vg=0.75V for EOT=10.0Angstrom.

引用

页码：78 / 79

页数：2

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