MBE growth of wide band gap Pb1-xSrxSe on Si(111) substrate

被引：13

作者：

Xu, G ^{[1
]}

Fang, XM ^{[1
]}

McCann, PJ ^{[1
]}

Shi, Z ^{[1
]}

机构：

[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 04期

关键词：

Sr-compound; MBE; wide band gap semiconductors;

D O I：

10.1016/S0022-0248(99)00757-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial wide band gap Pb1-xSrxSe (x > 0.9) layers have been successfully grown by molecular beam epitaxy on Si(1 1 1) and BaF2(1 1 1) substrates. Reflection high-energy electron diffraction (RHEED) showed that layers on both substrates were single crystal and oriented to the substrate. X-ray diffraction showed that layers on Si(1 1 1) were high quality as indicated by full-width at half-maximum (FWHM) values of less than 300 arcsec. These results provide a foundation for the eventual fabrications of ultraviolet detector arrays and high power-integrated circuits on silicon substrates. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：763 / 766

页数：4

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