Control of N content of GaPN grown by molecular beam epitaxy and growth of GaPN lattice matched to Si(100) substrate

We investigate the N content of a GaPN epilayer grown on GaP(100) by radio-frequency molecular beam epitaxy under various growth conditions. It is found that the N content of GaPN increases with decreasing growth temperature and with increasing rf power of the nitrogen plasma source. The N content was controlled by means of the growth temperature and rf power, and the GaPN epilayer was grown on a Si(100) substrate with a thin GaP buffer layer. The epilayer is investigated by cross-sectional transmission electron microscopy and it is clear that misfit dislocations and threading dislocations are not generated in the GaPN epilayer. As a result, it is demonstrated that lattice-matched and defect-free GaPN epilayers can be grown on Si(100) with a thin Ga-P buffer layer. We also discuss the effect of N incorporation on the generation of dislocations.