Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

被引：12

作者：

Chang, H. -Y. ^{[1
]}

Tsybeskov, L. ^{[1
]}

Sharma, S. ^{[2
]}

Kamins, T. I. ^{[2
]}

Wu, X. ^{[3
]}

Lockwood, D. J. ^{[3
]}

机构：

[1] New Jersey Inst Technol, Dept ECE, Newark, NJ 07102 USA

[2] Hewlett Packard Labs, Informat & Quantum Syst Lab, Palo Alto, CA 94304 USA

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 13期

基金：

美国国家科学基金会;

关键词：

SI; HETEROSTRUCTURES; NANOSTRUCTURES; SILICON; GROWTH; DEVICES; STRAIN; GE;

D O I：

10.1063/1.3240595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission electron microscopy measurements. (C) 2009 American Institute of Physics. [doi:10.1063/1.3240595]

引用

页数：3

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