Optical properties of GaNAs and GaInAsN quantum wells

被引：58

作者：

Potter, RJ ^{[1
]}

Balkan, N

机构：

[1] Univ Essex, Dept ESE, Photon Grp, Colchester C04 3SQ, Essex, England

[2] Univ Liverpool, Liverpool L69 3BX, Merseyside, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2004年 / 16卷 / 31期

关键词：

D O I：

10.1088/0953-8984/16/31/026

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present an overview of our optical characterization work on dilute nitride quantum well (QW) samples. A simple model for calculating interband transition energies is constructed, tested against published k (.) p results and used to model experimental data. Steady state photoluminescence (PL), time-resolved PL and photomodulated reflectance measurements are utilized to characterize GaNAs/GaAs, GaInNAs/GaAs and InGaAs/GaAs QWs. The effects of carrier localization, hot-carrier relaxation, non-radiative recombination and the reduced bandgap temperature dependence of dilute nitrides are investigated. Emission from recombining hot carriers in a GaInNAs/GaAs QW is recorded and used to estimate the LO-phonon scattering energy. The addition of small fractions of N is found to have little effect on phonon energy, which is found to be homega = 29.7 meV.

引用

页码：S3387 / S3412

页数：26

共 95 条

[1] Design considerations for 1.3μm emission of GaInNAs/GaAs strained quantum-well lasers [J].

Alexandropoulos, D ;

Adams, MJ .

IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (02) :105-109

[2] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[3] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS [J].

BABIC, DI ;

STREUBLE, K ;

MIRIN, RP ;

MARGALIT, NM ;

BOWERS, JE ;

HU, EL ;

MARS, DE ;

YANG, L ;

CAREY, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1225-1227

[4] Evidence of an oxygen recombination center in p+-n GaInNAs solar cells [J].

Balcioglu, A ;

Ahrenkiel, RK ;

Friedman, DJ .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2397-2399

[5]

BALKAN N, 2003, FP6511321

[6] Band gaps of GaPN and GaAsN alloys [J].

Bellaiche, L ;

Wei, SH ;

Zunger, A .

APPLIED PHYSICS LETTERS, 1997, 70 (26) :3558-3560

[7]

Bouche N, 1998, APPL PHYS LETT, V73, P2718, DOI 10.1063/1.122569

[8] Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy [J].

Buyanova, IA ;

Chen, WM ;

Pozina, G ;

Bergman, JP ;

Monemar, B ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1999, 75 (04) :501-503

[9]

BUYANOVA JA, 2001, PHYS REV B, V63

[10] InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor [J].

Chang, PC ;

Baca, AG ;

Li, NY ;

Sharps, PR ;

Hou, HQ ;

Laroche, JR ;

Ren, F .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2788-2790

← 1 2 3 4 5 6 7 8 9 10 →