1.3 mu m strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal-organic vapor epitaxy

High quality 15-period strain-compensated InAsP/InGaP electroabsorption (EA) modulator structures have been grown by atmospheric pressure metal-organic vapor epitaxy. The incorporation of large compressive strain (similar to 1.7%) in the InAsP wells and tensile strain (similar to-1.8%) in the InGaP barriers necessitated the growth of a few InP monolayers between the wells and barriers. The high structural quality of such samples has been demonstrated by (cross-sectional transmission electron microscopy analysis to be free of misfit dislocations and thickness undulations. The detection of a sharp and abrupt room-temperature exciton peak both in the photoconductivity and photoluminescence measurements further confirmed their excellent optical quality. 100 mu m cavity length EA modulators fabricated in these structures exhibited excellent performances namely, an extinction ratio higher than 20 dB for 2.5 V drive voltage, a 3 dB bandwidth over 20 GHz, and low coupling losses to fiber (less than 2.5 dB per facet). (C) 1997 American Institute of Physics.