1.3-MU-M WAVE-GUIDED ELECTROABSORPTION MODULATORS WITH STRAIN-COMPENSATED INASP/INGAP MQW STRUCTURES

被引：10

作者：

WAKITA, K

KOTAKA, I

AMANO, T

SUGIURA, H

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-Shi, Kanaguwa Pref., 243-01

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 16期

关键词：

ELECTROABSORPTION MODULATORS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19950949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality multiquantum well (MQW) structures with 1.5% compressive strain in InAsP wells and 0.8% tensile strain in InGaP barriers have been grown by gas-source molecular beam epitaxy on InP substrates. High-speed (3 dB bandwidth over 10 GHz) and low driving voltage (lower than 2 V for 20 dB on/off ratio) operation using these structures is demonstrated. These characteristics are the first reported for MQW modulators operating at 1.3 mu m.

引用

收藏

页码：1339 / 1341

页数：3

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