STRAIN-COMPENSATED MQW ELECTROABSORPTION MODULATOR FOR INCREASED OPTICAL POWER HANDLING

被引：8

作者：

CZAJKOWSKI, IK ^{[1
]}

GIBBON, MA ^{[1
]}

THOMPSON, GHB ^{[1
]}

GREENE, PD ^{[1
]}

SMITH, AD ^{[1
]}

SILVER, M ^{[1
]}

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 11期

关键词：

ELECTROABSORPTION MODULATORS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19940614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAsP MQW electroabsorption modulators with compressive strain in the wells and tensile strain m the barriers provide easer escape of photogenerated holes and operate at higher intensities before suffering saturation. Hole escape from wells is enhanced by a reduced energy difference between heavy-hole states in the well and light-hole states in the barrier.

引用

页码：900 / 901

页数：2

共 5 条

[1] HETEROJUNCTION BAND OFFSETS AND EFFECTIVE MASSES IN III-V QUATERNARY ALLOYS [J].

KRIJN, MPCM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) :27-31

[2]

MADELUNG E, 1991, DATA SCI TECHNOLOGY

[3]

THRUSH EJ, 1994, IN PRESS P INT C INP

[4] INCREASED OPTICAL SATURATION INTENSITIES IN GAINAS MULTIPLE QUANTUM-WELLS BY THE USE OF ALGAINAS BARRIERS [J].

WOOD, TH ;

CHANG, TY ;

PASTALAN, JZ ;

BURRUS, CA ;

SAUER, NJ ;

JOHNSON, BC .

ELECTRONICS LETTERS, 1991, 27 (03) :257-259

[5] ELECTRIC-FIELD SCREENING BY PHOTOGENERATED HOLES IN MULTIPLE QUANTUM-WELLS - A NEW MECHANISM FOR ABSORPTION SATURATION [J].

WOOD, TH ;

PASTALAN, JZ ;

BURRUS, CA ;

JOHNSON, BC ;

MILLER, BI ;

DEMIGUEL, JL ;

KOREN, U ;

YOUNG, MG .

APPLIED PHYSICS LETTERS, 1990, 57 (11) :1081-1083

← 1 →