Visible light emitting Si/SiO2 superlattices

被引:46
作者
Lu, ZH
Lockwood, DJ
Baribeau, JM
机构
[1] Inst. for Microstructural Sciences, National Research Council of Canada, Ottawa
关键词
D O I
10.1016/0038-1101(95)00245-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Six-period superlattices of Si/SiO2 have been grown at room temperature using molecular beam epitaxy. With this mature technology, the ultra-thin (1-3 nm) Si layers were grown to atomic layer precision. These layers were separated by similar to 1 nm thick SiO2 layers whose thickness was also well controlled by using a rate-limited oxidation process. The chemical and physical structures of the multilayers were characterized by cross-sectional TEM, X-ray diffraction, Raman spectroscopy, Auger sputter-profile, and X-ray photoelectron spectroscopy. The analysis showed that the Si layer is free of impurities and is amorphous, and that the SiO2/Si interface is sharp (similar to 0.5 nm). Photoluminescence (PL) measurements were made at room temperature using 457.9 nm excitation. The PL peak occurred at wavelengths across the visible range for these multilayers. The peak energy position E was found to be related to the Si layer thickness d by E (eV) = 1.60 + 0.72d(-2) in accordance with a quantum confinement mechanism and the bulk amorphous-Si band gap.
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收藏
页码:197 / 201
页数:5
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