Molecular beam epitaxy passivation studies of Ge and III-V semiconductors for advanced CMOS

被引：16

作者：

Merckling, C. ^{[1
]}

Penaud, J. ^{[2
]}

Kohen, D. ^{[1
]}

Bellenger, F. ^{[1
,3
]}

Alian, A. ^{[1
]}

Brammertz, G. ^{[1
]}

El-Kazzi, M. ^{[4
]}

Houssa, M. ^{[3
]}

Dekoster, J. ^{[1
]}

Caymax, M. ^{[1
,3
]}

Meuris, M. ^{[1
]}

Heyns, M. M. ^{[1
,3
]}

机构：

[1] IMEC, EPI, B-3001 Leuven, Belgium

[2] Riber, F-95873 Bezons, France

[3] Katholieke Univ Leuven, B-3001 Leuven, Belgium

[4] SUN Synchrotron, F-91192 Gif Sur Yvette, France

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

High mobility semiconductors; Passivation; Molecular beam epitaxy (MBE);

D O I：

10.1016/j.mee.2009.03.048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Future CMOS technologies will require the use of substrate material with a very high mobility in order to fulfil the performance requirements. Therefore, combination of Ge p-MOS with n-MOS devices made out of high mobility III/V compounds, such as GaAs, has recently received some attention for its possible use in advanced CIVICS applications. In this work, the physical, chemical and electrical properties of Al(2)O(3) high-kappa oxide deposited on Ge and GaAs, using Molecular Beam Deposition (MBD) technique, have been investigated. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1592 / 1595

页数：4

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