On the structural properties and optical transmittance of TiO2 r.f. sputtered thin films

被引：334

作者：

Mardare, D

Tasca, M

Delibas, M

Rusu, GI

机构：

[1] Alexandru Ioan Cuza Univ, Fac Phys, R-6600 Iasi, Romania

[2] Gh Asachi Tech Univ, R-6600 Iasi, Romania

来源：

APPLIED SURFACE SCIENCE | 2000年 / 156卷 / 1-4期

关键词：

doped TiO2 thin films; XRD; transmittance; optical band gap;

D O I：

10.1016/S0169-4332(99)00508-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Pure and doped TiO2 thin films were obtained by r.f. sputtering method. The samples were deposited onto glass and glass covered with indium tin oxide (ITO) substrates. Phase and surface morphology were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The structure of TiO2 thin films is influenced by the substrate used and also by doping with Ce, Nb and Fe impurities. Consequently, the transmittance will also be modified. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：200 / 206

页数：7

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