Epitaxial growth of oxides with pulsed laser interval deposition

被引：43

作者：

Blank, DHA ^{[1
]}

Koster, G ^{[1
]}

Rijnders, GAJHM ^{[1
]}

van Setten, E ^{[1
]}

Slycke, P ^{[1
]}

Rogalla, H ^{[1
]}

机构：

[1] Univ Twente, Dept Appl Phys, Low Temp Div, NL-7500 AE Enschede, Netherlands

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 211卷 / 1-4期

关键词：

pulsed laser deposition; oxides; RHEED; interval deposition;

D O I：

10.1016/S0022-0248(99)00880-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this contribution, pulsed laser deposition (PLD) in combination with high-pressure reflective high-energy electron diffraction (RHEED) is used to study the influence of different parameters including background pressure, substrate temperature. and repetition rate on film growth behaviour. The results are used fur a new approach to impose layer-by-layer growth using the high saturation of the deposited material by PLD in combination with a very fast deposition of the amount of material for completing exactly one unit cell. With this approach, which we will call pulsed laser interval deposition (PLID). we are able to deposit complex oxide materials in a layer-by-layer growth regime where normally island growth occurs. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：98 / 105

页数：8

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