Measurement of shallow dopant impurity profile in silicon using anodic sectioning and Lange method of Hall measurement

被引：9

作者：

Basu, PK ^{[1
]}

Chakravarty, BC ^{[1
]}

Singh, SN ^{[1
]}

Dutta, P ^{[1
]}

Kesavan, R ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,NEW DELHI 110054,INDIA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1996年 / 43卷 / 01期

关键词：

anodic oxidation; dopant profile; Hall voltage; spreading resistance;

D O I：

10.1016/0927-0248(95)00152-2

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Dopant profile analysis by successive anodic sectioning and sheet conductivity measurement is very well known. However, this requires prior knowledge of mobility as a function of dopant concentration for which there is considerable divergence in data in the literature. A new method has been given in this paper which does not require the knowledge of mobility data. Here Hall voltages are measured after each anodic sectioning and the dopant profile is generated. The profile generated by this method is compared with the profile obtained with the help of spreading resistance probe and the two profiles agree very well within the experimental error. Near the surface in both the profiles there is a hump. This is explained in terms of incomplete ionization of the dopants near the surface.

引用

页码：15 / 20

页数：6

共 13 条

[1] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J].