Optical modulator in silicon-on-insulator with a low thermal signature

被引:2
作者
Waldron, PD [1 ]
Jessop, PE
Yuen, AP
Winchiu, L
Chyurlia, P
Tarr, NG
Smy, TJ
Golub, I
Xu, DX
Janz, S
机构
[1] McMaster Univ, Hamilton, ON L8S 4L7, Canada
[2] Carleton Univ, Ottawa, ON K1S 5B6, Canada
[3] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2004年 / 22卷 / 03期
关键词
D O I
10.1116/1.1647586
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We describe the design, fabrication, and characterization of an optical modulator in silicon-on-insulator (SOI). The modulator is based upon a rib waveguide, with a transverse p - i - n diode being used to produce a refractive index change through the plasma dispersion effect. Measurements of optical modulation show submicrosecond transition times and confirm that electronic switching dominates over thermal effects. (C) 2004 American Vacuum Society.
引用
收藏
页码:800 / 802
页数:3
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