Fundamental limit of gate oxide thickness scaling in advanced MOSFETs

被引：34

作者：

Hirose, M

Koh, M

Mizubayashi, W

Murakami, H

Shibahara, K

Miyazaki, S

机构：

[1] Hiroshima Univ, Fac Engn, Dept Elect Engn, Higashihiroshima 7398527, Japan

[2] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 7398527, Japan

[3] Japan Sci & Technol Corp, CREST, Yokohama, Kanagawa, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 05期

关键词：

D O I：

10.1088/0268-1242/15/5/308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The statistical distribution of the direct tunnel leakage current through the ultrathin gate oxides of MOSFETs induces significant fluctuations in the threshold voltage and the transconductance when the gate oxide tunnel resistance becomes comparable to the gate poly-Si resistance. By calculating the measured tunnel current based on multiple scattering theory, it is shown that the threshold voltage and the transconductance fluctuations will be problematic when the gate oxide thickness is scaled down to about 0.8 nm.

引用

页码：485 / 490

页数：6

共 14 条

[1] The valence band alignment at ultrathin SiO2/Si interfaces [J].

Alay, JL ;

Hirose, M .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (03) :1606-1608

[2] High-density layer at the SiO2/Si interface observed by difference x-ray reflectivity [J].

Awaji, N ;

Ohkubo, S ;

Nakanishi, T ;

Sugita, Y ;

Takasaki, K ;

Komiya, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L67-L70

[3] Analysis of tunnel current through ultrathin gate oxides [J].

Fukuda, M ;

Mizubayashi, W ;

Kohno, A ;

Miyazaki, S ;

Hirose, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (12B) :L1534-L1536

[4]

FUKUDA M, 1994, P INT C ADV MICR DEV, P355

[5]

Khairurrijal, 1997, JPN J APPL PHYS 2, V36, pL1541

[6] Threshold voltage fluctuation induced by direct tunnel leakage current through 1.2-2.8 nm thick gate oxides for scaled MOSFETs [J].

Koh, M ;

Iwamoto, K ;

Mizubayashi, W ;

Murakami, H ;

Ono, T ;

Tsuno, M ;

Mihara, T ;

Shibahara, K ;

Yokoyama, S ;

Miyazaki, S ;

Miura, MM ;

Hirose, M .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :919-922

[7]

Lo SH, 1997, 1997 SYMPOSIUM ON VLSI TECHNOLOGY, P149, DOI 10.1109/VLSIT.1997.623742

[8] OPTICAL DETERMINATION OF MOBILITY AND CARRIER CONCENTRATION IN HEAVILY DOPED POLYCRYSTALLINE SILICON [J].

MISHIMA, Y ;

HIROSE, M ;

OSAKA, Y .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1157-1159

[9] Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces [J].

Miyazaki, S ;

Nishimura, H ;

Fukuda, M ;

Ley, L ;

Ristein, J .

APPLIED SURFACE SCIENCE, 1997, 113 :585-589

[10]

MIZUBAYASHI W, 1999, 1999 INT C SOL STAT, P318

← 1 2 →