A dual-phase-lag diffusion model for predicting thin film growth

被引:27
作者
Chen, JK [1 ]
Beraun, JE
Tzou, DY
机构
[1] USAF, Res Lab, Directed Energy Directorate, Kirtland AFB, NM 87117 USA
[2] Univ Missouri, Dept Mech & Aerosp Engn, Columbia, MO 65211 USA
关键词
D O I
10.1088/0268-1242/15/3/301
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A dual-phase-lag diffusion ((DPLD) model, which extends Fick's law by including two lagging times, tau(j) for the mass flux vector and tau(rho), for the density gradient, is developed to predict thin film growth. Depending upon the phase lag ratio tau(rho)/tau(j), the DPLD model uniquely characterizes four types of growth kinetics as reported in the literature. The model validation with experimental data of silicon oxidation and Hg1-x,CdxTe film deposition demonstrates that the present model captures the anomalous behaviour of thin film growth from the very beginning of the process to relatively long times very well.
引用
收藏
页码:235 / 241
页数:7
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