A new theory for silicon oxidation

被引：16

作者：

Peng, KY

Wang, LC

Slattery, JC

机构：

[1] TEXAS A&M UNIV, DEPT CHEM ENGN, COLLEGE STN, TX 77843 USA

[2] TEXAS A&M UNIV, DEPT ELECT ENGN, COLLEGE STN, TX 77843 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 05期

关键词：

D O I：

10.1116/1.588825

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new theory for oxidation of silicon is derived which is based upon diffusion of molecular oxygen in stoichiometric silicon dioxide, consistent with the mass balance at the silicon-silicon dioxide phase interface. The results are compared with the experimental data of Lie et al. and Adams et al. (C) 1996 American Vacuum Society.

引用

收藏

页码：3316 / 3320

页数：5

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