Dependence of intermediated noble metals on the optical and electrical properties of ITO/metal/ITO multilayers

被引：37

作者：

Lee, J. Y. ^{[1
]}

Yang, J. W. ^{[1
]}

Chae, J. H. ^{[1
]}

Park, J. H. ^{[1
]}

Choi, J. I. ^{[1
]}

Park, H. J. ^{[1
]}

Kim, Daeil ^{[1
]}

机构：

[1] Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea

来源：

OPTICS COMMUNICATIONS | 2009年 / 282卷 / 12期

关键词：

Optical properties; Thin films; Magnetron sputtering; X-ray diffraction; INDIUM TIN OXIDE; ITO THIN-FILMS; DEPOSITION; MICROSTRUCTURE; COATINGS; SILICON;

D O I：

10.1016/j.optcom.2008.12.044

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Sn doped In2O3 (ITO) single layer and a sandwich structure of ITO/metal/ITO (IMI) multilayer films were deposited on a polycarbonate substrate using radio-frequency and direct-current magnetron sputtering process without substrate heating, The intermediated metal films in the IMI structure were Au and Cu films and the thickness of each layer in the IMI films was kept constant at 50 nm/10 nm/40 nm. In this study, the ITO/Au/ITO films show the lowest resistivity of 5.6 x 10(-5) Omega CM. However the films show the lower optical transmission of 71% at 550 nm than that (81%) of as deposited ITO films. The ITO/Cu/ITO films show an optical transmittance of 54% and electrical resistivity of 1.5 x 10(-4) Omega CM. Only the ITO/Au/ITO films showed the diffraction peaks in the XRD pattern. The figure of merit indicated that the ITO/Au/ITO films performed better in a transparent conducting electrode than in ITO single layer films and ITO/Cu/ITO films. (C) 2009 Published by Elsevier B.V.

引用

页码：2362 / 2366

页数：5

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