Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p+in+ diodes

被引：4

作者：

Dunn, GM

Ghin, R

Rees, GJ

David, JPR

Plimmer, S

Herbert, DC

机构：

[1] Univ Aberdeen, Sch Phys, Aberdeen AB24 3UE, Scotland

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[3] Def Res Agcy, Malvern WR14 3PS, Worcs, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1999年 / 14卷 / 11期

关键词：

D O I：

10.1088/0268-1242/14/11/309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlxGa1-xAs and also submicron p(+)in(+) diodes for x less than or equal to 40%. The calculated impact ionization rates in bulk AlxGa1-xAs compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the p(+)in(+) diodes were found to agree very well with our experimental results for both the analytical and the numerical models.

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页码：994 / 1000

页数：7

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