A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED

被引：66

作者：

Lee, Ju Young ^{[1
]}

Lee, Jong Hoon ^{[1
]}

Kim, Hong Seung ^{[1
]}

Lee, Chung-Hyun ^{[1
]}

Ahn, Hyung-Soo ^{[1
]}

Cho, Hyung Koun ^{[2
]}

Kim, Young Yi ^{[2
]}

Kong, Bo Hyun ^{[2
]}

Lee, Ho Seong ^{[3
]}

机构：

[1] Korea Maritime Univ, Pusan, South Korea

[2] Sungkyunkwan Univ, Suwon, South Korea

[3] Kyungpook Natl Univ, Taegu, South Korea

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 17期

关键词：

ZnO; Heterostructure; Thermal annealing; Light-emitting diode; EL; I-V; GROWTH; FILMS;

D O I：

10.1016/j.tsf.2009.03.028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the effects of thermal annealing in air and N-2 ambient on the structural, optical, and electrical properties of zinc oxide (ZnO) films deposited on a p-GaN substrate. Also, we report on the fabrication and device characterization of heterojunction light-emitting diodes based on the n-ZnO/p-GaN systems. In the case of N-2 ambient, room-temperature electroluminescence (EL) in the violet region with peak wavelength 400 nm was observed under forward bias. In air ambient, EL spectrum consisted of a broad band from 400 nm to 700 nm due to the Ga-O mixed region formed interface between the ZnO and GaN layer. (c) 2009 Elsevier B.V. All rights reserved.

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收藏

页码：5157 / 5160

页数：4

相关论文

共 18 条

[1] Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes [J].

Alivov, YI ;

Van Nostrand, JE ;

Look, DC ;

Chukichev, MV ;

Ataev, BM .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2943-2945

[2] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[3] Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector [J].

Chichibu, SF ;

Ohmori, T ;

Shibata, N ;

Koyama, T ;

Onuma, T .

APPLIED PHYSICS LETTERS, 2004, 85 (19) :4403-4405

[4] ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique [J].

Chuang, Ricky W. ;

Wu, Rong-Xun ;

Lai, Li-Wen ;

Lee, Ching-Ting .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[5] Cathodoluminescence of ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition [J].

Chukichev, MV ;

Ataev, BM ;

Mamedov, VV ;

Alivov, YI ;

Khodos, II .

SEMICONDUCTORS, 2002, 36 (09) :977-980

[6] Heterojunction band offset engineering [J].

Franciosi, A ;

Van de Walle, CG .

SURFACE SCIENCE REPORTS, 1996, 25 (1-4) :1-+

[7] Band alignment at a ZnO/GaN (0001) heterointerface [J].

Hong, SK ;

Hanada, T ;

Makino, H ;

Chen, YF ;

Ko, HJ ;

Yao, T ;

Tanaka, A ;

Sasaki, H ;

Sato, S .

APPLIED PHYSICS LETTERS, 2001, 78 (21) :3349-3351

[8] Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures:: transmission electron microscopy and triple-axis X-ray diffractometry [J].

Hong, SK ;

Ko, HJ ;

Chen, YF ;

Yao, T .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :537-541

[9] Near-UV emitting diodes based on a transparent p-n Junction composed of heteroepitaxially grown p-SrCu2O2 and n-Zno [J].

Hosono, H ;

Ohta, H ;

Hayashi, K ;

Orita, M ;

Hirano, M .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :496-502

[10] p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101 [J].

Hwang, DK ;

Kang, SH ;

Lim, JH ;

Yang, EJ ;

Oh, JY ;

Yang, JH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3