ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique

被引：123

作者：

Chuang, Ricky W. ^{[1
]}

Wu, Rong-Xun ^{[1
]}

Lai, Li-Wen ^{[1
]}

Lee, Ching-Ting ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

关键词：

D O I：

10.1063/1.2822817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of ZnO-on-GaN heterostructures was implemented using the vapor cooling condensation system. The technique thus developed was employed to fabricate both the p-GaN/n-ZnO:In (p-n) and p-GaN/i-ZnO/n-ZnO:In (p-i-n) heterojunction light-emitting diodes (LEDs). A rectifying diodelike behavior was clearly observed from both the p-n and p-i-n heterojunction LEDs, with the forward turn-on voltage of 3 V and the reverse breakdown voltage of -15 V determined for the p-n heterojunction LEDs, compared to 7 and -23 V, respectively, for the p-i-n heterojunction LEDs. Based on the results of photoluminescence and electroluminescence studies conducted on these LED structures, the ZnO layer responsible for the peak emission wavelength of 385 nm were also verified experimentally.

引用

页数：3

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