GaN growth on sapphire

被引：80

作者：

Melton, WA ^{[1
]}

Pankove, JI ^{[1
]}

机构：

[1] ASTRALUX INC,BOULDER,CO 80301

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 178卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(97)00082-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Most of the work on GaN since 1968 [H.P. Maruskas and J.J. Tietjen, Appl. Phys. Lett. 15 (1969) 327] [1] etc. has used GaN grown on sapphire substrates. The most frequently chosen crystallographic planes have been the r-, c-, and a-plane of sapphire. The tremendous mismatch between the lattices of GaN and sapphire can be partly overcome by the use of thin buffer layers of AlN or GaN. In spite of the lattice-matching problem, many useful optoelectronic and electronic devices can be made.

引用

页码：168 / 173

页数：6

共 23 条

[11] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

MARUSKA, HP ;

TIETJEN, JJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&

[12] PROPERTIES OF ZN-DOPED VPE-GROWN GAN .1. LUMINESCENCE DATA IN RELATION TO DOPING CONDITIONS [J].

MONEMAR, B ;

LAGERSTEDT, O ;

GISLASON, HP .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :625-639

[13] GROWTH OF GAN BY ECR-ASSISTED MBE [J].

MOUSTAKAS, TD ;

LEI, T ;

MOLNAR, RJ .

PHYSICA B, 1993, 185 (1-4) :36-49

[14] InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (2B) :L217-L220

[15] THERMAL ANNEALING EFFECTS ON P-TYPE MG-DOPED GAN FILMS [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M ;

IWASA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (2B) :L139-L142

[16] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

[17] GAN GROWTH USING GAN BUFFER LAYER [J].

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1705-L1707

[18]

OHKI Y, 1981, P INT S GAAS RELATED, P479

[19] MODEL FOR ELECTROLUMINESCENCE IN GAN [J].

PANKOVE, JI ;

LAMPERT, MA .

PHYSICAL REVIEW LETTERS, 1974, 33 (06) :361-365

[20]

PANKOVE JI, 1994, P IEDM SAN FRANC CA, P389

← 1 2 3 →