Laser-induced thermal effects on the optical properties of free-standing porous silicon films

被引:42
作者
Koyama, H [1 ]
Fauchet, PM [1 ]
机构
[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
关键词
D O I
10.1063/1.372093
中图分类号
O59 [应用物理学];
学科分类号
摘要
A detailed study of the unique optical properties of free-standing oxidized porous silicon films has been performed. Under continuous-wave laser irradiation, a strongly superlinear light emission and a very large laser-induced absorption are observed. The nonlinear emission is characterized by a sharp intensity increase that is in proportion to at least the eighth power of the excitation intensity. This emission has a broad peak (600-1300 nm), slow time constant (greater than or equal to 10 ms), and very low polarization memory (less than or equal to 0.01 near the emission peak). The induced absorption increases linearly with the pump laser intensity and can be as large as several times the linear absorption. The increase in the normalized absorption coefficient is almost independent of the oxidation temperature and emission wavelength, with essentially no polarization dependence. These experimental results are discussed in terms of laser-induced thermal effects. An evaluation of the temperature rise under the laser irradiation is performed both experimentally and theoretically. A remarkably high-temperature rise of greater than or equal to 700 degrees C is estimated for a moderate excitation intensity of 20 W/cm(2). (C) 2000 American Institute of Physics. [S0021-8979(00)08104-4].
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页码:1788 / 1794
页数:7
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共 41 条
[1]   Controlled electroluminescence spectra of porous silicon diodes with a vertical optical cavity [J].
Araki, M ;
Koyama, H ;
Koshida, N .
APPLIED PHYSICS LETTERS, 1996, 69 (20) :2956-2958
[2]   ANHARMONIC EFFECTS IN LIGHT-SCATTERING DUE TO OPTICAL PHONONS IN SILICON [J].
BALKANSKI, M ;
WALLIS, RF ;
HARO, E .
PHYSICAL REVIEW B, 1983, 28 (04) :1928-1934
[3]   AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].
BEALE, MIJ ;
BENJAMIN, JD ;
UREN, MJ ;
CHEW, NG ;
CULLIS, AG .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636
[4]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[5]   Tunable, narrow, and directional luminescence from porous silicon light emitting devices [J].
Chan, S ;
Fauchet, PM .
APPLIED PHYSICS LETTERS, 1999, 75 (02) :274-276
[6]   Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition [J].
Costa, J ;
Roura, P ;
Morante, JR ;
Bertran, E .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) :7879-7885
[7]   ULTRALOW VALUES OF THE ABSORPTION-COEFFICIENT OF SI OBTAINED FROM LUMINESCENCE [J].
DAUB, E ;
WURFEL, P .
PHYSICAL REVIEW LETTERS, 1995, 74 (06) :1020-1023
[8]   Ultra-low values of the absorption coefficient for band-band transitions in moderately doped Si obtained from luminescence [J].
Daub, E ;
Wurfel, P .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) :5325-5331
[9]   SILOXENE - CHEMICAL QUANTUM CONFINEMENT DUE TO OXYGEN IN A SILICON MATRIX [J].
DEAK, P ;
ROSENBAUER, M ;
STUTZMANN, M ;
WEBER, J ;
BRANDT, MS .
PHYSICAL REVIEW LETTERS, 1992, 69 (17) :2531-2534
[10]   THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON [J].
DELERUE, C ;
ALLAN, G ;
LANNOO, M .
PHYSICAL REVIEW B, 1993, 48 (15) :11024-11036