Development of high-resolution single-ion PSD using random access memories

被引：5

作者：

Hamano, T ^{[1
]}

Takebe, M ^{[1
]}

Hirao, T ^{[1
]}

Nashiyama, I ^{[1
]}

Kamiya, T ^{[1
]}

Suda, T ^{[1
]}

Sakai, T ^{[1
]}

机构：

[1] JAPAN ATOM ENERGY RES INST,TAKASAKI,GUMMA 37012,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 130卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(97)00220-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Using heavy-ion microbeam, we have examined the feasibility of a Static Random Memory (SRAM) as an in situ Position Sensitive Detector (PSD) with bit-cell size resolution for extremely low current ion beams. It is found that SRAM are promising candidates for high-resolution PSD to diagnose an extremely low current ion microbeam. (C) 1997 Elsevier Science B.V.

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收藏

页码：280 / 284

页数：5

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